Mscotek Engineers - Mascotek Engineers

Mascotek Engineers design, fabricate and supply customized vacuum-based plasma processing systems for thin film deposition and etching applications. We specialise in bespoke UHV compatible Magnetron Sputter Deposition and Ion Beam Etching Systems for Thin Film applications related to Superconductivity, Quantum Computing and Spintronics.

Why Choose Mascotek Engineers?

Custom-Built Systems

UHV Compatibility

Precision in every action

Scalable Configurations

Vacuum up to 10⁻⁹ mbar

Strong Post-Sales Support

Our Products

High vacuum RF/DC Sputtering and Argon Ion Beam Etching System with load lock chamber

Stainless steel 304L cuboid vacuum chamber having two DC magnetron sources on opposite faces, one RF magnetron source from bottom and ion source from top face
Cuboid water cooled substrate holder to hold 4 different substrates each up to 20mm maximum diameter mounted on each of the 4 faces
Substrates can be loaded on the holder in the load lock chamber and via a magnetically coupled arm can be moved in and out as well as rotated to enable positioning any of the 4 substrates in front of any of the three magnetron sources or the ion source
System suitable for multilayer deposition as well as precleaning and ion beam etching with or without selectivity mask
Cuboid process chamber can be isolated from the load lock chamber using manual gate valve
Cuboid process chamber is pumped using 700lps turbo pump backed by 20m^3/hr dry pump to enable ultimate vacuum better than 5 X 10^-8mbar
Load lock chamber pumped separately using 12m^3/hr dry scroll pump to enable ultimate vacuum in load lock chamber better than 5 X 10^-2 mbar
The system incorporates rectangular water cooled DC magnetron sources of size 55mm X 35mm, one 2 inch RF magnetron source and one RF Ion source of 40mm beam diameter
DC magnetron sources are powered using 800V, 500mA power supply andRF magnetron source is powered using300W RF power supply and Ion source is capable of generating Ion beam voltage of up to 1000V and variable beam current up to 25mA

Triple Walled UHV multi-target DC Magnetron Sputter Deposition System

Cylindrical stainless steel 304L Triple walled UHV chamber having top flange incorporating 4 DC magnetron sources, motorized substrate holder and substrate masking plate
The flange carrying magnetrons suspended in the innermost cylinder covered by liquid nitrogen jacket and having outermost jacket connected to pumping system, gauges, residual gas analyser and gas inlet via gas mix box
Pumping system consist of 1000lps turbo pump backed by 20m^3/hr dry scroll pump to enable ultimate vacuum better than 5 x10 ^-9 mbar after 200°C baking cycle
Water cooled Magnetron sources powered using 800V, 500mA DC power supply
Substrate holder capable to handle several numbers of substrates of maximum size 20mm diameter or smaller to be manipulated below any of selected magnetron sources at any selected desired speed from 0.05rpm to 5rpm to enable selection of materials and deposition thicknesses.

UHV DC Magnetron Sputter Deposition System with Integrated Argon Ion Milling cum Load Lock Chamber

Spherical 16 inch stainless steel 304L chamber consisting of three confocal DC magnetron sources and load lock chamber consisting of ion source
Substrate holder capable of holding 2 inch diameter substrate or smaller
Substrate holder in both sputter as well as load lock chamber is water cooled and source to substrate distance can be varied between 70mm to 110mm using Z shift mechanisms
Water cooled DC magnetron sources are of 2 inch diameter and are powered using 800V, 500mA power supplies
Ion source is RF type capable of generating ion beam having 40mm beam diameter and beam voltage up to 1000V and beam current up to 25mA
The sputter chamber is pumped using 700lps turbo pump backed by 20m^3/hr dry scroll pump and load lock chamber housing the ion source is pumped using 300lps turbo pump backed by 10m^3/ hr dry scroll pump
The spherical sputter chamber incorporates all conflat flanges and can be baked up to 200°C to enable ultimate vacuum better than 5 X 10^-9 mbar
Load lock chamber is capable of reaching ultimate vacuum batter than 2 X 10^-6 mbar
Magnetically coupled substrate transfer mechanism enables transfer of substrates from load lock chamber to sputter chamber and vice versa

Argon Ion Milling System with Load Lock

Spherical 16-inch stainless steel 304L chamber consisting of Argon Ion Source
Cylindrical load lock chamber consisting of magnetically coupled substrate transfer mechanism enables transfer of substrates from load lock chamber to spherical chamber and vice versa
Substrate holder capable of holding maximum 3-inch diameter substrate or multiple smaller substrates
Substrate holder is water cooled and source to substrate distance can be varied up to +/- 20mm using Z shift mechanism
Rotation of substrate holder up to 20 rpm for uniform milling.
Ion source is RF type capable of generating ion beam having 40mm beam diameter and beam voltage up to 1000V and beam current up to 25mA
The spherical chamber is pumped using 700lps turbo pump backed by 28m^3/hr rotary pump to get ultimate vacuum in 10^-7 mbar range and load lock chamber is pumped using 12m^3/ hr rotary pump to get ultimate vacuum in 10^-3 mbar range

Why Choose Mascotek Engineers?

Custom-Built Systems

UHV Compatibility

Precision in every action

Scalable Configurations

Vacuum up to 10⁻⁹ mbar

Strong Post-Sales Support

Our Products

Our Valued Customers

Our Products

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